Hengyu Yu

Hengyu Yu (Member, IEEE) received the B.S. degree in Electrical Engineering from the School of Electrical Engineering and Automation, Anhui University, Hefei, China, in 2018, and the Ph.D. degree in Electrical Engineering from the College of Electrical and Information Engineering, Hunan University, Changsha, China, in 2023. From 2023 to 2025, he was a postdoctoral Scholar with the Department of Electrical and Computer Engineering at The Ohio State University, USA. He is currently a postdoctoral fellow in the Department of Electrical and Electronic Engineering at The University of Hong Kong, China. He has been a Wide Bandgap Electronics Lab member since 2026 pursuing his research interests of the design and optimization of Silicon Carbide power devices, the reliability and ruggedness of power semiconductor devices, and the application of Silicon Carbide MOSFETs in power electronics.
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