Wide Bandgap Electronics Group
Wide Bandgap Electronics Group
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Ivan Kravchenko
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5 kV, 20 mΩꞏcm2 Enhancement-Mode Multi-Channel GaN Monolithic Bidirectional Switch
10 kV E-mode GaN HEMT: Physics for breakdown voltage upscaling
Robust Avalanche (1.5 kV, 2 kA/cm2) in Vertical GaN Diodes on Patterned Sapphire Substrate
Enhancement-mode GaN Monolithic Bidirectional Switch with Breakdown Voltage over 3.3 kV
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