Liyang Jin

A Universal Photodiode-Based Optical Gate Driver for GaN Power Devices
Photonics-integrated power electronics: A review and perspective
Cryogenic neuromorphic circuits using gate-controlled negative differential resistance in silicon carbide
First Demonstration of Optically-Controlled 650 V Power GaN HEMT with Ultrafast Switching Speed
First Characterization of GaN Power Device and IC at Deep Cryogenic Temperatures down to 100 mK
Optically-Controlled 3.3 kV SiC MOSFET with Fast Switching Speed and Low Optical Power

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