Ming Xiao

5 kV, 20 mΩꞏcm2 Enhancement-Mode Multi-Channel GaN Monolithic Bidirectional Switch
Monolithic cascode multi-channel high electron mobility transistors
10 kV E-mode GaN HEMT: Physics for breakdown voltage upscaling
Termination structures for semiconductor devices (pending)
Robust Avalanche (1.5 kV, 2 kA/cm2) in Vertical GaN Diodes on Patterned Sapphire Substrate
Enhancement-mode GaN Monolithic Bidirectional Switch with Breakdown Voltage over 3.3 kV
Power Schottky barrier diodes with high breakdown voltage and low leakage current
Charge balanced power Schottky barrier diodes
Charge balanced power transistors (pending)
Heterogeneous superjunction devices (pending)
Heterogeneous termination structures for semiconductor devices (pending)

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