Wide Bandgap Electronics Group

Wide Bandgap Electronics Group

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Pengju Kong

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Intrinsically Exceptional Short-Circuit Robustness (tSC > 30 µs, ISC > 230 A) in Monolithic Bidirectional GaN-on-Si Power HEMTs
Stability Improvement of GaN Power HEMT by a Multi-Functional Monolithic Protection Circuit

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