Wide Bandgap Electronics Group
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Paper-Conference
5 kV, 20 mΩꞏcm2 Enhancement-Mode Multi-Channel GaN Monolithic Bidirectional Switch
Dec 2025·In
2025 IEEE International Electron Devices Meeting (IEDM)
Yuan Qin
,
Ming Xiao
,
Hongchang Cui
,
Xin Yang
,
Zineng Yang
,
Hehe Gong
,
Kai Liu
,
Ivan Kravchenko
,
Florin Udrea
,
Kai Cheng
,
Han Wang
,
Yuhao Zhang*
Link
A Monolithic Reconfigurable RRAM CIM Array Integrating PUF, TRNG, and a Lightweight Block Cipher for Secure Edge AI
Dec 2025·In
2025 IEEE International Electron Devices Meeting (IEDM)
Songqi Wang
,
Shuang Liang
,
Shaonan Wu
,
Zhiqi Yang
,
Jichang Yang
,
Xinyuan Zhang
,
Yi Li
,
Yuhao Zhang*
,
Zhongrui Wang
,
Aoyang Zhang
,
Han Wang
Link
First Demonstration of an Ultra-Wide Bandgap Power Module through Device-Package, Electro-Thermo-Mechanical Co-Optimization
Dec 2025·In
2025 IEEE International Electron Devices Meeting (IEDM)
Hehe Gong
,
Xin Yang
,
Boyan Wang
,
Zichen Zhang
,
Qingrui Yuchi
,
Zineng Yang
,
Zhengpeng Wang
,
Matthew Porter
,
Hongchang Cui
,
Yuan Qin
,
Yibo Wang
,
Xiaosheng Wang
,
Chaoqiang Jiang
,
Rong Zhang
,
Han Wang
,
Dong Dong
,
Jiandong Ye
,
Guoquan Lu
,
Yuhao Zhang*
Link
Intrinsically Exceptional Short-Circuit Robustness (tSC > 30 µs, ISC > 230 A) in Monolithic Bidirectional GaN-on-Si Power HEMTs
Dec 2025·In
2025 IEEE International Electron Devices Meeting (IEDM)
Hongchang Cui
,
Xiaoming Liu
,
Xin Yang
,
Hehe Gong
,
Rong Yang
,
Liang Song
,
Fu Chen
,
Jianping Wang
,
Yi Sun
,
Pengju Kong
,
Yuhao Zhang*
Link
Low Thermal Resistance X-band AlGaN/GaN/AlN-on-SiC RF Power HEMTs with Record Pout = 41 W/mm and fT×BV = 31 THz•V
Dec 2025·In
2025 IEEE International Electron Devices Meeting (IEDM)
Hong Zhou
,
Kun Zhang
,
Chaoqun Zhang
,
Qifeng Lyu
,
Hui Zhang
,
Naiqian Zhang
,
Peng Dong
,
Jia Cao
,
Yali Mao
,
Hehe Gong
,
Zhihong Liu
,
Chao Yuan
,
Yachao Zhang
,
Yi Pei
,
Yuhao Zhang*
,
Yue Hao
,
Jincheng Zhang
Link
Single-Crystal 4H/3C-SiC Engineered Substrate: A Novel Platform Enabling High-Performance Low-Voltage SiC Devices
Dec 2025·In
2025 IEEE International Electron Devices Meeting (IEDM)
Link
WAVSiC: A Physics-Based Compact Model for SiC MOSFETs
Dec 2025·In
2025 IEEE International Electron Devices Meeting (IEDM)
Yijing Feng
,
Johan Alant
,
Xin Yang
,
Rebecca Fang
,
Qihao Song
,
Bixuan Wang
,
Han Wang
,
Yuhao Zhang*
,
Ujwal Radhakrishna
,
Lan Wei
Link
First Demonstration of Optically-Controlled 650 V Power GaN HEMT with Ultrafast Switching Speed
Jun 2025·In
2025 37th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Xin Yang
,
Liyang Jin
,
Matthew Porter
,
Hongchang Cui
,
Zineng Yang
,
Hehe Gong
,
Han Wang
,
Linbo Shao*
,
Yuhao Zhang*
Link
Dynamic Reliability of IC-Interface GaN HEMTs Demonstrated Under Ultra-Fast (ns), High-Frequency (MHz) Gate Overvoltage Stress (>30V)
Jun 2025·In
2025 37th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Bixuan Wang
,
Xin Yang
,
Qihao Song
,
Kalparupa Mukherjee
,
Loizos Efthymiou
,
Daniel Popa
,
Giorgia Longobardi
,
Dong Dong
,
Florin Udrea*
,
Yuhao Zhang*
Link
Dynamic Stability and Reliability of Multi-Kilovolt GaN Monolithic Bidirectional HEMT
Jun 2025·In
2025 37th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Y. Qin
,
Y. Guo
,
M. Porter
,
M. Xiao
,
H. Gong
,
Zineng Yang
,
D. Popa
,
L. Efthymiou
,
K. Cheng
,
Z. Chu
,
H. Wang
,
F. Udrea
,
Yuhao Zhang*
Link
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