Paper-Conference

Single-Crystal 4H/3C-SiC Engineered Substrate: A Novel Platform Enabling High-Performance Low-Voltage SiC Devices

Dec 2025·In 2025 IEEE International Electron Devices Meeting (IEDM)

WAVSiC: A Physics-Based Compact Model for SiC MOSFETs

Dec 2025·In 2025 IEEE International Electron Devices Meeting (IEDM)

Yijing Feng, Johan Alant, Xin Yang, Rebecca Fang, Qihao Song, Bixuan Wang, Han Wang, Yuhao Zhang*, Ujwal Radhakrishna, Lan Wei

First Demonstration of Optically-Controlled 650 V Power GaN HEMT with Ultrafast Switching Speed

Jun 2025·In 2025 37th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Xin Yang, Liyang Jin, Matthew Porter, Hongchang Cui, Zineng Yang, Hehe Gong, Han Wang, Linbo Shao*, Yuhao Zhang*

First Demonstration of Optically-Controlled 650 V Power GaN HEMT with Ultrafast Switching Speed

Dynamic Reliability of IC-Interface GaN HEMTs Demonstrated Under Ultra-Fast (ns), High-Frequency (MHz) Gate Overvoltage Stress (>30V)

Jun 2025·In 2025 37th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Bixuan Wang, Xin Yang, Qihao Song, Kalparupa Mukherjee, Loizos Efthymiou, Daniel Popa, Giorgia Longobardi, Dong Dong, Florin Udrea*, Yuhao Zhang*

Dynamic Stability and Reliability of Multi-Kilovolt GaN Monolithic Bidirectional HEMT

Jun 2025·In 2025 37th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Y. Qin, Y. Guo, M. Porter, M. Xiao, H. Gong, Zineng Yang, D. Popa, L. Efthymiou, K. Cheng, Z. Chu, H. Wang, F. Udrea, Yuhao Zhang*

Dynamic Stability and Reliability of Multi-Kilovolt GaN Monolithic Bidirectional HEMT

Switching Reliability of NiO/Ga2O3 Bipolar Junction Evaluated by a Circuit Method

Jun 2025·In 2025 37th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Hehe Gong, Xin Yang, Zineng Yang, Yuan Qin, Jiandong Ye, Yuhao Zhang*

Switching Reliability of NiO/Ga2O3 Bipolar Junction Evaluated by a Circuit Method

First Characterization of GaN Power Device and IC at Deep Cryogenic Temperatures down to 100 mK

May 2025·In 2025 IEEE Applied Power Electronics Conference and Exposition (APEC)

Xin Yang, Matthew Porter, Zineng Yang, Zichen Xi, Liyang Jin, Liyan Zhu, Linbo Shao, Yuhao Zhang*

First Characterization of GaN Power Device and IC at Deep Cryogenic Temperatures down to 100 mK

Optically-Controlled 3.3 kV SiC MOSFET with Fast Switching Speed and Low Optical Power

May 2025·In 2025 IEEE Applied Power Electronics Conference and Exposition (APEC)

Xin Yang, Guannan Shi, Liyang Jin, Yuan Qin, Matthew Porter, Che-Wei Chang, Xiaoting Jia, Dong Dong, Linbo Shao, Yuhao Zhang*

Optically-Controlled 3.3 kV SiC MOSFET with Fast Switching Speed and Low Optical Power

Impact of Substrate Bias on the Stability of Bidirectional GaN HEMT in Hard-and Soft-Switching

Mar 2025·In 2025 IEEE Applied Power Electronics Conference and Exposition (APEC)

Qihao Song, Hongchang Cui, Qiang Li, Yuhao Zhang*