Publications

Avalanche leakage current mechanism in vertical GaN devices on foreign substrates
Jun 2026·Applied Physics Letters
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Avalanche leakage current mechanism in vertical GaN devices on foreign substrates
Robustness of SiC and GaN Diodes under Extreme dV/dt Stress up to 980 V/ns
May 2026·In 2026 IEEE Applied Power Electronics Conference and Exposition (APEC)
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Robustness of SiC and GaN Diodes under Extreme dV/dt Stress up to 980 V/ns
Novel Internal Gate-to-Gate Crosstalk Phenomenon in Monolithic Bidirectional GaN-on-Si HEMTs
May 2026·In 2026 IEEE Applied Power Electronics Conference and Exposition (APEC)
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Novel Internal Gate-to-Gate Crosstalk Phenomenon in Monolithic Bidirectional GaN-on-Si HEMTs
In-Situ Characterization of Forward Stability in SiC and GaN Diodes over Stress Times from 10-5 to 10^3 s
May 2026·In 2026 IEEE Applied Power Electronics Conference and Exposition (APEC)
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In-Situ Characterization of Forward Stability in SiC and GaN Diodes over Stress Times from 10-5 to 10^3 s
Evaluation and Application of Kilovolt GaN-on-Sapphire Diode IC
May 2026·In 2026 IEEE Applied Power Electronics Conference and Exposition (APEC)
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Evaluation and Application of Kilovolt GaN-on-Sapphire Diode IC
Dynamic On-Resistance and Dynamic Threshold Voltage of GaN-on-Si HEMTs With Varying Substrate Connections in Steady-State Hard Switching
May 2026·In 2026 IEEE Applied Power Electronics Conference and Exposition (APEC)
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Dynamic On-Resistance and Dynamic Threshold Voltage of GaN-on-Si HEMTs With Varying Substrate Connections in Steady-State Hard Switching
A Universal Photodiode-Based Optical Gate Driver for GaN Power Devices
May 2026·IEEE Transactions on Industrial Electronics
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A Universal Photodiode-Based Optical Gate Driver for GaN Power Devices
Photonics-integrated power electronics: A review and perspective
May 2026·Applied Physics Express
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Photonics-integrated power electronics: A review and perspective
Power Devices for Extreme Temperature Applications
May 2026·In 2026 10th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
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Power Devices for Extreme Temperature Applications
A megawatt ultra-wide bandgap semiconductor module for pulsed power electronics
Mar 2026·Nature Communications
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A megawatt ultra-wide bandgap semiconductor module for pulsed power electronics
Cryogenic neuromorphic circuits using gate-controlled negative differential resistance in silicon carbide
Mar 2026·Nature Communications
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Cryogenic neuromorphic circuits using gate-controlled negative differential resistance in silicon carbide
Plenty of Room at the Bottom and Top: Future Perspectives on GaN Power Devices and Applications
Mar 2026·IEEE Transactions on Power Electronics
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Plenty of Room at the Bottom and Top: Future Perspectives on GaN Power Devices and Applications
GaN Power Devices for Electrified Transportation: Status, Challenges, and Perspectives
Feb 2026·IEEE Transactions on Electron Devices
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GaN Power Devices for Electrified Transportation: Status, Challenges, and Perspectives
High-Temperature Enhancement-Mode Ga2O3 Monolithic Bidirectional Switch with >6.5 kV Breakdown Voltage
Dec 2025·IEEE Electron Device Letters
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High-Temperature Enhancement-Mode Ga2O3 Monolithic Bidirectional Switch with >6.5 kV Breakdown Voltage
High power density gallium nitride radio frequency transistors via enhanced nucleation in heteroepitaxy
Dec 2025·Nature Communications
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1000 V, 10 MHz Voltage Multiplier Based on Monolithically Integrated GaN-on-Sapphire Diode Bridge IC
Dec 2025·IEEE Transactions on Power Electronics
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1000 V, 10 MHz Voltage Multiplier Based on Monolithically Integrated GaN-on-Sapphire Diode Bridge IC
WAVSiC: A Physics-Based Compact Model for SiC MOSFETs
Dec 2025·In 2025 IEEE International Electron Devices Meeting (IEDM)
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Single-Crystal 4H/3C-SiC Engineered Substrate: A Novel Platform Enabling High-Performance Low-Voltage SiC Devices
Dec 2025·In 2025 IEEE International Electron Devices Meeting (IEDM)
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Low Thermal Resistance X-band AlGaN/GaN/AlN-on-SiC RF Power HEMTs with Record Pout = 41 W/mm and fT×BV = 31 THz•V
Dec 2025·In 2025 IEEE International Electron Devices Meeting (IEDM)
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Intrinsically Exceptional Short-Circuit Robustness (tSC > 30 µs, ISC > 230 A) in Monolithic Bidirectional GaN-on-Si Power HEMTs
Dec 2025·In 2025 IEEE International Electron Devices Meeting (IEDM)
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Intrinsically Exceptional Short-Circuit Robustness (tSC > 30 µs, ISC > 230 A) in Monolithic Bidirectional GaN-on-Si Power HEMTs
First Demonstration of an Ultra-Wide Bandgap Power Module through Device-Package, Electro-Thermo-Mechanical Co-Optimization
Dec 2025·In 2025 IEEE International Electron Devices Meeting (IEDM)
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First Demonstration of an Ultra-Wide Bandgap Power Module through Device-Package, Electro-Thermo-Mechanical Co-Optimization
A Monolithic Reconfigurable RRAM CIM Array Integrating PUF, TRNG, and a Lightweight Block Cipher for Secure Edge AI
Dec 2025·In 2025 IEEE International Electron Devices Meeting (IEDM)
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5 kV, 20 mΩꞏcm2 Enhancement-Mode Multi-Channel GaN Monolithic Bidirectional Switch
Dec 2025·In 2025 IEEE International Electron Devices Meeting (IEDM)
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5 kV, 20 mΩꞏcm2 Enhancement-Mode Multi-Channel GaN Monolithic Bidirectional Switch
Heterogeneous integration of ultrawide bandgap semiconductors for radio frequency power devices
Nov 2025·Science Advances
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Heterogeneous integration of ultrawide bandgap semiconductors for radio frequency power devices
Monolithic cascode multi-channel high electron mobility transistors
This disclosure provides semiconductor device including a first transistor with a first gate terminal, a first source terminal, and the …
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Monolithic cascode multi-channel high electron mobility transistors
In-situ Measurement and Physical Mechanism of Dynamic RON in GaN-on-Si Monolithic Half-Bridge Power IC
Aug 2025·IEEE Transactions on Power Electronics
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In-situ Measurement and Physical Mechanism of Dynamic RON in GaN-on-Si Monolithic Half-Bridge Power IC
Plasma-free etched b-ga2o3-nio merged pin schottky diode with high-voltage stress reliability (pending)
A semiconductor device includes a layered structure forming multiple carrier channels extending in parallel at different depths of the …
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First Characterization of Si IGBT, SiC MOSFET, and GaN HEMT at Deep Cryogenic Temperatures down to 10 Millikelvins
Aug 2025·IEEE Transactions on Power Electronics
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First Characterization of Si IGBT, SiC MOSFET, and GaN HEMT at Deep Cryogenic Temperatures down to 10 Millikelvins
Power Cycling Testing for Power Semiconductor Switches: Methods, Standards, Limitations, and Outlooks
Aug 2025·IEEE Transactions on Power Electronics
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10 kV E-mode GaN HEMT: Physics for breakdown voltage upscaling
Jul 2025·Applied Physics Letters
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10 kV E-mode GaN HEMT: Physics for breakdown voltage upscaling
The renaissance of lateral power devices for high voltage applications
Jul 2025·APL Electronic Devices
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The renaissance of lateral power devices for high voltage applications
Termination structures for semiconductor devices (pending)
A process for forming a device can include forming a first semiconductor region having a first conductivity type. The process can …
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Termination structures for semiconductor devices (pending)
First Demonstration of Optically-Controlled 650 V Power GaN HEMT with Ultrafast Switching Speed
Jun 2025·In 2025 37th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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First Demonstration of Optically-Controlled 650 V Power GaN HEMT with Ultrafast Switching Speed
Switching Reliability of NiO/Ga2O3 Bipolar Junction Evaluated by a Circuit Method
Jun 2025·In 2025 37th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Switching Reliability of NiO/Ga2O3 Bipolar Junction Evaluated by a Circuit Method
Dynamic Stability and Reliability of Multi-Kilovolt GaN Monolithic Bidirectional HEMT
Jun 2025·In 2025 37th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Dynamic Stability and Reliability of Multi-Kilovolt GaN Monolithic Bidirectional HEMT
Dynamic Reliability of IC-Interface GaN HEMTs Demonstrated Under Ultra-Fast (ns), High-Frequency (MHz) Gate Overvoltage Stress (>30V)
Jun 2025·In 2025 37th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Dynamic Reliability of IC-Interface GaN HEMTs Demonstrated Under Ultra-Fast (ns), High-Frequency (MHz) Gate Overvoltage Stress (>30V)
Robust Avalanche (1.5 kV, 2 kA/cm2) in Vertical GaN Diodes on Patterned Sapphire Substrate
May 2025·IEEE Electron Device Letters
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Robust Avalanche (1.5 kV, 2 kA/cm2) in Vertical GaN Diodes on Patterned Sapphire Substrate
Optically-Controlled 3.3 kV SiC MOSFET with Fast Switching Speed and Low Optical Power
May 2025·In 2025 IEEE Applied Power Electronics Conference and Exposition (APEC)
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Optically-Controlled 3.3 kV SiC MOSFET with Fast Switching Speed and Low Optical Power
First Characterization of GaN Power Device and IC at Deep Cryogenic Temperatures down to 100 mK
May 2025·In 2025 IEEE Applied Power Electronics Conference and Exposition (APEC)
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First Characterization of GaN Power Device and IC at Deep Cryogenic Temperatures down to 100 mK
Enhancement-mode GaN Monolithic Bidirectional Switch with Breakdown Voltage over 3.3 kV
Apr 2025·IEEE Electron Device Letters
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Enhancement-mode GaN Monolithic Bidirectional Switch with Breakdown Voltage over 3.3 kV
Impact of Substrate Bias on the Stability of Bidirectional GaN HEMT in Hard-and Soft-Switching
Mar 2025·In 2025 IEEE Applied Power Electronics Conference and Exposition (APEC)
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Impact of Substrate Bias on the Stability of Bidirectional GaN HEMT in Hard-and Soft-Switching
Power Schottky barrier diodes with high breakdown voltage and low leakage current
This disclosure provides a diode including a semiconductor region having at least one two-dimensional carrier channel of a first …
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Power Schottky barrier diodes with high breakdown voltage and low leakage current
Wide-bandgap semiconductors and power electronics as pathways to carbon neutrality
Jan 2025·Nature Review Electrical Engineering
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Wide-bandgap semiconductors and power electronics as pathways to carbon neutrality
Junction-based deep mesa termination for multi-kilovolt vertical β-Ga2O3 power devices
Jan 2025·Applied Physics Letters
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Junction-based deep mesa termination for multi-kilovolt vertical β-Ga2O3 power devices
Reliability of NiO/β-Ga2O3 bipolar heterojunction
Jan 2025·Applied Physics Letters
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Reliability of NiO/β-Ga2O3 bipolar heterojunction
Charge balanced power Schottky barrier diodes
This disclosure provides a diode including a semiconductor region having at least one two-dimensional carrier channel of a first …
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Charge balanced power Schottky barrier diodes
Stability Improvement of GaN Power HEMT by a Multi-Functional Monolithic Protection Circuit
Dec 2024·IEEE Transactions on Power Electronics
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Stability Improvement of GaN Power HEMT by a Multi-Functional Monolithic Protection Circuit
Charge balanced power transistors (pending)
A semiconductor device includes a semiconductor region having at least one two-dimensional carrier channel of a first conductivity …
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Charge balanced power transistors (pending)
Heterogeneous superjunction devices (pending)
A device may include a substrate of a first conductivity type, the first conductivity type being one of a n-type conductivity and a …
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Heterogeneous superjunction devices (pending)
ß-Ga2O3 Junction Barrier Schottky (JBS) Diodes with Sputtered p-Type NiO (pending)
A self-aligned lithography process for the fabrication of an electronic device having predefined areas of a second semiconductor …
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ß-Ga2O3 Junction Barrier Schottky (JBS) Diodes with Sputtered p-Type NiO (pending)
Gallium Oxide Planar MOS-Schottky Rectifier (pending)
A semiconductor device includes a layered structure forming multiple carrier channels extending in parallel at different depths of the …
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Gallium Oxide Planar MOS-Schottky Rectifier (pending)
High electron mobility transistors with charge compensation
A variety of high electron mobility transistor structures are provided having charge compensation regions that can extend below the …
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High electron mobility transistors with charge compensation
Heterogeneous termination structures for semiconductor devices (pending)
A device may include a first semiconductor region of a first conductivity type having a top surface and being formed of a first …
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Heterogeneous termination structures for semiconductor devices (pending)
Semiconductor device with multiple carrier channels
A semiconductor device includes a layered structure forming multiple carrier channels including at least one n-type channel formed in a …
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Semiconductor device with multiple carrier channels
Enhancement-mode transistors with increased threshold voltage
A field effect transistor that has a source, a drain, a gate, a semiconductor region, and a dielectric region. The dielectric region is …
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Enhancement-mode transistors with increased threshold voltage
Semiconductor device with multiple-functional barrier layer
A semiconductor device includes a semiconductor structure forming a carrier channel, a barrier layer arranged in proximity with the …
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Semiconductor device with multiple-functional barrier layer
Semiconductor device with multiple carrier channels
A semiconductor device includes a layered structure forming multiple carrier channels extending in parallel at different depths of the …
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Semiconductor device with multiple carrier channels