5 kV, 20 mΩꞏcm2 Enhancement-Mode Multi-Channel GaN Monolithic Bidirectional Switch
Abstract
GaN multi-channel material has recently emerged as a promising platform for RF and power devices due to its high current capacity and low sheet resistance. Here we demonstrate, for the first time, a multi-channel GaN monolithic bidirectional switch (MBDS), achieving symmetric breakdown voltage (BV) up to 5 kV, specific on-resistance of 20 mΩcm2, and threshold voltage of 0.8 V in both voltage/current polarities. This BV is the highest reported in MBDS devices to date. This device is fabricated on a 150-mm 5-channel GaN-on-sapphire wafer and features a dual junction termination extension for electric field management. Enhancement-mode (E-mode) is achieved by a monolithic dual-cascode architecture, which integrates two low-voltage, single-channel E-mode HEMTs on either side of the multi-channel region. Furthermore, we evaluate the high-temperature reverse-bias (HTRB) reliability and dynamic …
Hongchang Cui
M.S. Xi'an Jiaotong University
B.S. China University of Mining and Technology
Xin Yang
M.S. Xi'an Jiaotong University
B.S. Chongqing University
Zineng Yang
M.Sc. RWTH Aachen University
B.Eng. (Hons) University of Nottingham Ningbo/University of Nottingham
