Intrinsically Exceptional Short-Circuit Robustness (tSC > 30 µs, ISC > 230 A) in Monolithic Bidirectional GaN-on-Si Power HEMTs
Abstract
GaN monolithic bidirectional switch (MBDS) has gained broad traction and is approaching commercialization. However, its short-circuit robustness – a key reliability concern in conventional GaN HEMTs – has not yet been reported. This work fills this gap by evaluating the short-circuit performance of a 650 V, 15 mΩ GaN-on-Si MBDS under a high bus voltage of 400 V. The device demonstrates an exceptionally long short-circuit withstand time (tSC) exceeding 50 µs, with a peak short-circuit current (ISC) over 230 A, and withstands repetitive 30 µs short-circuit stresses without major parametric shifts. This tSC far surpasses typical system requirement (10 µs). To elucidate the underlying mechanism, we construct two hybrid GaN BDS devices using discrete GaN HEMTs from a different vendor under two substrate biasing schemes. The hybrid BDS with separate substrates shows a tSC < 1 µs, while the one with a …
Hongchang Cui
M.S. Xi'an Jiaotong University
B.S. China University of Mining and Technology
Xin Yang
M.S. Xi'an Jiaotong University
B.S. Chongqing University
