WAVSiC: A Physics-Based Compact Model for SiC MOSFETs
Abstract
The paper proposes WAVSiC, a comprehensive and user-friendly physics-based compact model for SiC MOSFETs. The model formulation, including the details of the modular approach and the construction of each basic module are explained. The model can automatically account for scalability with device channel-length and other dimensions, as well as critical effects from body diode, JFET depletion, and non-linear drift resistance. Good agreement has been achieved between simulation using fitted model and experimental device characterization and circuit testing, for both a commercial 650V device (at multiple temperatures) and a commercial 1200V device, showing the accuracy, scalability and flexibility of the proposed model. The model has also been validated for computational efficiency, symmetry, robustness, and circuit simulator compatibility, ready for PDK adoption.
