Dynamic On-Resistance and Dynamic Threshold Voltage of GaN-on-Si HEMTs With Varying Substrate Connections in Steady-State Hard Switching
Abstract
The dynamic stability of GaN-on-Si HEMTs with different substrate connections is a critical for understanding the device reliability and designing the substrate bias management circuits for monolithic bidirectional switches. Prior studies have mainly focused on dynamic on-resistance (RON) characterization using pulse I–V or single-pulse double-pulse tests, which deviate from practical operating conditions. In addition, dynamic threshold voltage (VTH)—essential to understanding RON shifts—has rarely been evaluated under different substrate conditions. This work presents a circuit test platform enabling in-situ characterization of dynamic RON, dynamic VTH, and substrate bias under steady-state hard-switching. Using this setup, GaN-on-Si HEMTs are tested under source-connected, drain-connected, and floating substrate configurations. Under the floating-substrate condition, we find the substrate bias exhibits …
Hongchang Cui
M.S. Xi'an Jiaotong University
B.S. China University of Mining and Technology
Xin Yang
M.S. Xi'an Jiaotong University
B.S. Chongqing University
Zineng Yang
M.Sc. RWTH Aachen University
B.Eng. (Hons) University of Nottingham Ningbo/University of Nottingham
Hengbo Zhang
M.S. University of Chinese Academy of Sciences
B.S. Sichuan University
