Evaluation and Application of Kilovolt GaN-on-Sapphire Diode IC
Abstract
This work presents a comprehensive evaluation of a kilovolt-class monolithically integrated GaN-on-sapphire diode bridge IC designed for high-frequency, low-current, high-voltage power conversion. Building on our latest application of this IC in a 10 MHz, 1000 V Cockcroft-Walton voltage multiplier (CWVM), this study further studies the diode’s switching behaviors, the CWVM’s loss analysis, and the diode IC’s voltage scalability. Experimental double-pulse testing confirms the absence of reverse recovery charge, validating the unipolar nature of the device for megahertz operation. A detailed decomposition of the CWVM multiplication gain (Av) reveals that performance losses are primarily dominated by static forward voltage drops and load-dependent drops, while dynamic switching losses remain negligible due to the low-parasitic monolithic design. Furthermore, an investigation into the dynamic voltage blocking …
Zineng Yang
M.Sc. RWTH Aachen University
B.Eng. (Hons) University of Nottingham Ningbo/University of Nottingham
Hengbo Zhang
M.S. University of Chinese Academy of Sciences
B.S. Sichuan University
Hehe Gong
Ph.D Nanjing University
B.S.Northwestern Polytechnical University
Xin Yang
M.S. Xi'an Jiaotong University
B.S. Chongqing University
