In-Situ Characterization of Forward Stability in SiC and GaN Diodes over Stress Times from 10-5 to 10^3 s
Abstract
The dynamic stability of wide-bandgap (WBG) p-n diodes is a critical reliability concern for many power converters. In this work, we develop a dynamic-static hybrid test methodology for the in-situ parametric shift characterization for WBG diodes over stress times spanning eight orders of magnitude—from 10 μs to 1000 s. A curve tracer is programmed to monitor device instability under long-term static stress (1–1000 s), while a custom H-bridge circuit enables dynamic stability measurements at short stress times down to 10 μs by reconstructing dynamic current-voltage (I-V) characteristics from recorded waveforms. Using this hybrid approach, we characterize industrial SiC and GaN p-n diodes. The SiC diode exhibits a time-dependent, recoverable negative shift in turn-on voltage (VON) of 0.19 V after 100 ms of dynamic stress, which increases to 0.28 V after 1000 s of static stress. In contrast, the vertical GaN p-n …
Xin Yang
M.S. Xi'an Jiaotong University
B.S. Chongqing University
Hehe Gong
Ph.D Nanjing University
B.S.Northwestern Polytechnical University
Zineng Yang
M.Sc. RWTH Aachen University
B.Eng. (Hons) University of Nottingham Ningbo/University of Nottingham
Hongchang Cui
M.S. Xi'an Jiaotong University
B.S. China University of Mining and Technology
Hengbo Zhang
M.S. University of Chinese Academy of Sciences
B.S. Sichuan University
