Novel Internal Gate-to-Gate Crosstalk Phenomenon in Monolithic Bidirectional GaN-on-Si HEMTs
Abstract
Gallium Nitride (GaN) monolithic bidirectional switches (MBDS), which monolithically integrate two gate stacks for a shared drift region, are an emerging technology with strong potential to revolutionize AC power conversion. However, the inherently low threshold voltage and narrow gate-voltage headroom of Schottky-type p-GaN gates make gate reliability a critical concern, which remains largely unexplored in GaN bidirectional HEMTs. In this work, we report, for the first time, a gate-to-gate crosstalk phenomenon in GaN MBDS. Detailed analysis shows that the effect originates from displacement current coupling through the inter-gate capacitance (CGG), which induces a voltage overshoot and a deep valley on the inactive gate during the active gate’s turn-on and turn-off transients, respectively. This behavior directly mirrors the switching dynamics of the active gate, raising reliability concerns for the inactive gate …
Hongchang Cui
M.S. Xi'an Jiaotong University
B.S. China University of Mining and Technology
Haozhe Jin
Ph.D Southeast University
B.S. Southwest Jiaotong University
