Power Devices for Extreme Temperature Applications
Abstract
Power semiconductor devices operational at extreme temperatures – cryogenic and high temperatures – are desirable in aerospace, quantum, transportation, and industrial applications. This talk discusses progress in wide-bandgap (WBG) and ultra-wide bandgap (UWBG) power devices for both thermal frontiers. First, the deep cryogenic operation of GaN HEMTs and SiC MOSFETs down to 10 mK reveals the superior performance of GaN HEMTs, showing a 4-fold reduction in on-resistance (RON) and elimination of dynamic RON issue. SiC MOSFETs remain functional but become non-Ohmic due to carrier freeze-out, with conduction triggered by shallow-level impact ionization. Second, leveraging the superior high-temperature stabilities of UWBG materials, a new generation of high-voltage Ga2O3 devices are demonstrated, including 10-kV Ga2O3 Schottky rectifiers and normally-off JFETs operational up to 250ºC …
Zineng Yang
M.Sc. RWTH Aachen University
B.Eng. (Hons) University of Nottingham Ningbo/University of Nottingham
Xin Yang
M.S. Xi'an Jiaotong University
B.S. Chongqing University
