High-Temperature Enhancement-Mode Ga2O3 Monolithic Bidirectional Switch with >6.5 kV Breakdown Voltage
Abstract
This work demonstrates an enhancement-mode (E-mode) Ga2O3 monolithic bidirectional switch (MBDS) capable of high-temperature operation, achieving breakdown voltages (BV) exceeding 6.5 kV in both polarities at 150 °C and maintaining 4.7 kV at 200 °C. The device incorporates two highly doped NiO heterojunction gates, each connected to a lightly doped NiO junction termination extension (JTE) for electric field management. It exhibits symmetric conduction characteristics with a threshold voltage (VTH) of 1.9 V and a specific on-resistance (Ron,sp) of 1755 mΩ·cm2. Even at 200 °C, VTH remains positive while Ron,sp increases by only 1.3×. This represents the best performance reported for ultra-wide bandgap (UWBG) E-mode MBDS devices and the first demonstration of a kilovolt MBDS operational up to 200 °C. These results suggest the potential of Ga2O3 MBDS for high-temperature, high-voltage …
Xin Yang
M.S. Xi'an Jiaotong University
B.S. Chongqing University
Zineng Yang
M.Sc. RWTH Aachen University
B.Eng. (Hons) University of Nottingham Ningbo/University of Nottingham
