Cryogenic neuromorphic circuits using gate-controlled negative differential resistance in silicon carbide
Abstract
Cryogenic electronic circuits are crucial for interfacing and controlling scalable quantum computing platforms at millikelvin temperatures, yet face stringent thermal constraints demanding ultra-low power operation. Neuromorphic circuits, emulating the spiking behavior of biological neurons, offer solution for achieving energy-efficient electronics under these conditions. Here, we report the gate-controlled negative differential resistance (NDR) in silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs). This NDR effect, arising from electron-donor impact ionization (EDII) in SiC MOSFET, achieves on/off current ratio over 10^7. Meanwhile, the behavior of NDR can be fully controlled by the gate voltage of the MOSFET. Leveraging this gate-controlled NDR, we demonstrate programmable cryogenic spiking neuromorphic circuits, including sensory, logic, and integrate-and-fire neurons, with …
Xin Yang
M.S. Xi'an Jiaotong University
B.S. Chongqing University
Zineng Yang
M.Sc. RWTH Aachen University
B.Eng. (Hons) University of Nottingham Ningbo/University of Nottingham
