A megawatt ultra-wide bandgap semiconductor module for pulsed power electronics
Abstract
Ultra-wide bandgap semiconductors exhibit advantageous electronic properties that make them promising for high-voltage, high-power electronics applications. Building on over a decade of progress in material growth and device fabrication, discrete ultra-wide bandgap devices with power-switching capacities up to the kilowatt level have been recently demonstrated. However, a packaged, multi-die ultra-wide bandgap power module – essential for further power scaling toward industrial, biomedical, grid, and aerospace applications – has yet to be realized. Here, we present a flip-chip packaged gallium oxide power module capable of 1000 A, 1000 V pulsed power switching with fast speed and minimal reverse recovery, advancing the power capacity of ultra-wide bandgap electronics by over two orders of magnitude. To address challenges posed by high electric fields and transient power surges, we employ a …
Hehe Gong
Ph.D Nanjing University
B.S.Northwestern Polytechnical University
Xin Yang
M.S. Xi'an Jiaotong University
B.S. Chongqing University
Zineng Yang
M.Sc. RWTH Aachen University
B.Eng. (Hons) University of Nottingham Ningbo/University of Nottingham
