Plenty of Room at the Bottom and Top: Future Perspectives on GaN Power Devices and Applications
Abstract
GaN power devices have achieved commercial success primarily in the 30-900 V range, particularly in consumer electronics. Yet, to borrow from Richard Feynman's famous remark, there remains plenty of room at both the “bottom” and the “top”- not only in voltage classes, with opportunities at both lower and higher ends, but also in integration scale, spanning from fundamental device architectures to monolithic integration. This paper explores the untapped potential of GaN power technology across these domains, beginning with both ends of the voltage spectrum: low-voltage (<30-50 V) and high-voltage (>1 kV) applications. We highlight emerging GaN device structures under industrial development, analyze their performance limits, and examine transformative GaN applications enabled by these devices, including AI processor power delivery, humanoid robotics, light detection and ranging (LiDAR), electric …
Zineng Yang
M.Sc. RWTH Aachen University
B.Eng. (Hons) University of Nottingham Ningbo/University of Nottingham
Xin Yang
M.S. Xi'an Jiaotong University
B.S. Chongqing University
